1 edition 1.1 august 1999 FLM7785-6F c-band internally matched fet item drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds v gs 15 -5 31.2 -65 to +175 175 t c = 25 c v v w c c p t t stg t ch condition unit rating absolute maximum rating (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 10 volts. 2. the forward and reverse gate currents should not exceed 16.0 and -2.8 ma respectively with gate resistance of 100 ? . item saturated drain current transconductance pinch-off voltage gate source breakdown voltage power-added efficiency 3rd order intermodulation distortion output power at 1db g.c.p. power gain at 1db g.c.p. symbol i dss - 2700 4050 - 2500 - -0.5 -1.5 -3.0 -5 - - 7.5 8.5 - -31- 37.5 38.5 - v ds = 5v, i ds =120ma v ds = 5v, i ds =1200ma v ds = 5v, v gs = 0v i gs = -150 a v ds =10v, i ds = 0.65 i dss (typ.), f = 7.7 ~ 8.5 ghz, z s =z l = 50 ohm f = 8.5 ghz, ? f = 10 mhz 2-tone test p out = 27.5dbm s.c.l. ma ms v db % -44 -46 - dbc dbm v g m v p v gso p 1db g 1db drain current - 1750 2250 ma i dsr im 3 add gain flatness -- 0.6 db ? g test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) channel to case thermal resistance - 4.0 4.8 c/w r th 10v x i dsr x r th channel temperature rise -- 80 c ? t ch g.c.p.: gain compression point, s.c.l.: single carrier level case style: ib description the FLM7785-6F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance. features ?high output power: p 1db = 38.5dbm (typ.) ?high gain: g 1db = 8.5db (typ.) ?high pae: add = 31% (typ.) ?low im 3 = -46dbc@po = 27.5dbm ?broad band: 7.7 ~ 8.5ghz ?impedance matched zin/zout = 50 ? ?hermetically sealed
2 FLM7785-6F c-band internally matched fet output power & im 3 vs. input power v ds =10v f 1 = 8.5 ghz f 2 = 8.51 ghz 2-tone test 12 14 16 18 20 22 24 26 input power (s.c.l.) (dbm) s.c.l.: single carrier level 21 23 25 27 29 31 33 -55 -45 -35 -25 -15 output power (s.c.l.) (dbm) im 3 p out im 3 (dbc) power derating curve 20 40 30 10 0 50 100 150 200 case temperature ( c) total power dissipation (w) output power vs. frequency pin=31dbm 29dbm 27dbm 25dbm 7.9 7.7 8.1 8.3 8.5 frequency (ghz) 37 38 39 40 41 36 35 output power (dbm) v ds =10v p 1db v ds =10v f = 8.1 ghz output power vs. input power 22 20 24 26 28 30 32 input power (dbm) 36 38 40 34 32 30 28 30 45 15 0 output power (dbm) add p out add (%)
3 FLM7785-6F c-band internally matched fet s-parameters v ds = 10v, i ds = 1200ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 7500 .612 124.2 3.104 -84.5 0.032 -104.5 .452 115.9 7600 .574 112.9 3.046 -96.9 0.038 -121.7 .489 102.2 7700 .537 101.5 2.997 -109.3 0.042 -138.3 .520 90.7 7800 .494 89.7 2.943 -121.5 0.047 -151.5 .546 80.7 7900 .448 77.2 2.905 -133.3 0.053 -164.9 .568 71.9 8000 .399 63.2 2.873 -145.3 0.056 -177.4 .579 64.3 8100 .346 47.3 2.849 -157.6 0.062 169.5 .580 57.5 8200 .294 27.5 2.828 -169.9 0.065 156.8 .571 51.8 8300 .249 1.9 2.813 177.2 0.070 145.4 .554 46.5 8400 .222 -31.1 2.798 163.8 0.072 131.9 .525 42.0 8500 .236 -69.1 2.767 149.8 0.076 118.1 .481 38.4 8600 .287 -102.3 2.708 135.3 0.077 105.0 .427 36.4 8700 .364 -128.8 2.620 120.3 0.078 89.9 .369 36.7 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 0.2 0.1 scale for |s 12 | 25 50 ? 250 scale for |s 21 | 1 2 3 4 7.5 ghz 7.5 ghz 8.5 8.5 7.7 7.7 7.9 7.9 8.1 8.1 8.3 8.3 8.7 8.7 7.5 ghz 7.5 ghz 8.5 8.5 7.7 7.7 7.9 7.9 8.1 8.1 8.3 8.3 8.7 8.7
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1998 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution ?do not put these products into the mouth. ?do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ?observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLM7785-6F c-band internally matched fet 2-r 1.6 0.15 (0.063) 0.6 (0.024) 10.7 (0.421) 12.0 (0.422) 17.0 0.15 (0.669) 21.0 0.15 (0.827) 12.9 0.2 (0.508) 2.0 min. (0.079) 2.0 min. (0.079) 0.2 max. (0.008) 1.45 (0.059) case style "ib" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source (flange) 3. drain 5.2 max. (0.205) 2.6 0.15 (0.102) 0.1 (0.004) 1 2 3
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